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DOI: 10.2174/97816080578181130101 eISBN: 978-1-60805-781-8, 2013 ISBN: 978-1-60805-782-5 ISSN: 2589-2940 (Print) ISSN: 2215-0005 (Online)
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For Books Kunihiro Suzuki , " Ion Implantation and Activation ", Bentham Science Publishers (2013). https://doi.org/10.2174/97816080578181130101
Print ISBN978-1-60805-782-5
Online ISBN978-1-60805-781-8
Page: i-ii (2) Author: Robert W. Dutton DOI: 10.2174/9781608057818113010001
Page: iii-v (3) Author: Kunihiro Suzuki DOI: 10.2174/9781608057818113010002
Page: vi-vii (2) Author: Kunihiro Suzuki DOI: 10.2174/9781608057818113010003
Page: 3-7 (5) Author: Kunihiro Suzuki DOI: 10.2174/9781608057818113010004 PDF Price: $30
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Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. </p><p> Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. </p><p> This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.
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