A parameter of thorough dose, Φa/c is introduced to express continuous amorphous layer thickness. Φa/c is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer da is expressed by Φa/c combined with parameters for ion implantation profiles. Φa/c is independent of ion implantation conditions but depends on impurities. Φa/c for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict da over wide ion implantation conditions.
Keywords: Ion implantation, amorphous, solid phase epitaxy, tilt, through dose, damage, shallow junction, annealing, activation, sheet resistance, residual defects, substrate temperature, displacement energy, transferred energy, amorphous/crystal interface, cross section, pocket ion implantation.