Ion Implantation and Activation

Volume: 2

Amorphous Layer Thickness

Author(s): Kunihiro Suzuki

Pp: 78-120 (43)

DOI: 10.2174/9781608057900113020008

* (Excluding Mailing and Handling)


A parameter of thorough dose, Φa/c is introduced to express continuous amorphous layer thickness. Φa/c is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer da is expressed by Φa/c combined with parameters for ion implantation profiles. Φa/c is independent of ion implantation conditions but depends on impurities. Φa/c for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict da over wide ion implantation conditions.

Keywords: Ion implantation, amorphous, solid phase epitaxy, tilt, through dose, damage, shallow junction, annealing, activation, sheet resistance, residual defects, substrate temperature, displacement energy, transferred energy, amorphous/crystal interface, cross section, pocket ion implantation.

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