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Author(s): Kunihiro Suzuki
Pp: 18-31 (14)
DOI: 10.2174/9781608057900113020004
* (Excluding Mailing and Handling)
Two-dimensional profile model for ion implantation at high tilt angle was derived, in order to describe the pocket ion implantation of MOSFETs. Then we can generate two-dimensional profile of ion implantation for the full MOS process neglecting diffusion of dopants, in order to predict electrical characteristic of MOSFETs.
Keywords: Ion implantation, two-dimensional profile, lateral distribution, MOSFET’s, co-implantation, flash lamp annealing, redistribution, diffusion, inverse modeling, extension, straggling, lateral straggling, reverse short channel effect, pocket ion implantation, VLSI.
Cite this chapter as:
Analytical Model for Two-Dimensional Profile in MOSFET’s, Ion Implantation and Activation (2013) 2: 18. https://doi.org/10.2174/9781608057900113020004
DOIhttps://doi.org/10.2174/9781608057900113020004 Print ISSN2589-2940
Publisher NameBentham Science Publisher
Online ISSN2215-0005
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