Ion Implantation and Activation

Volume: 2

Analytical Model for Two-Dimensional Profile in MOSFET’s

Author(s): Kunihiro Suzuki

Pp: 18-31 (14)

DOI: 10.2174/9781608057900113020004

* (Excluding Mailing and Handling)


Two-dimensional profile model for ion implantation at high tilt angle was derived, in order to describe the pocket ion implantation of MOSFETs. Then we can generate two-dimensional profile of ion implantation for the full MOS process neglecting diffusion of dopants, in order to predict electrical characteristic of MOSFETs.

Keywords: Ion implantation, two-dimensional profile, lateral distribution, MOSFET’s, co-implantation, flash lamp annealing, redistribution, diffusion, inverse modeling, extension, straggling, lateral straggling, reverse short channel effect, pocket ion implantation, VLSI.

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