Plasma enhanced chemical vapor deposition technique plays a key role in the
development of solar cells based on amorphous and microcrystalline silicon thin films. The
deposition process depends strongly on physical and chemical interactions in the plasma.
Subsequently, the film properties are dependent on different parameters such as power and
frequency, the substrate temperature, the gas pressure and composition, the magnitude and the
pattern of the gas flow, the electrode geometry, etc. The aim of this chapter is to discuss all
effects of these parameters in detail.
Keywords: Plasma deposition, deposition rate, solar cell, PECVD system, flow rate, high
frequency, amorphous silicon, microcrystalline silicon, large area, electrode, production system,
roll-to-roll, photovoltaic, thin film, vapor deposition, substrate, microstructure, cluster
configuration, in-line configuration, bandgap.
