Performance Analysis of Rectangular Core-Shell Double Gate Junctionless Transistor (RCS-DGJLT)

The shrinking of the device parameters' dimensions could be a solution for improving the performance and high transistor density of traditional MOSFETs. However, the short-channel effects could create a problem in the performance of the device. This chapter examines and performs comprehensive simulations of the standard junctionless double-gate transistor. In this research, silicon thickness and work function engineering are used to better understand the junctionless transistor's operation. As silicon thickness increases, the junctionless double-gate FET's performance begins to decline. Additionally, the typical double-gate junctionless FET is modelled, and the change in silicon thickness, work function, gate dielectric, and doping concentration is studied. The findings of the analysis and simulation are found to be quite similar. As a result, the device is referred to as a rectangular core-shell double-gate junctionless transistor because of the core being sandwiched between the two shells of the device (RCS-DGJLT). While the core-shell is doped with acceptor impurities in an n-type RCS-DGJLT, donor impurities are used in the shells. The device performance parameters have been improved such that IOFF of order ~10-14A, ION ~10-5A, ION/IOFF ~109 , SS nearly 68.9mV/decade, DIBL nearly 52.6mV/V are obtained at a total silicon thickness of 12nm and channel length of 20nm. The effect of channel length variation on RCS-DGJLT is also studied. RCS-DGJLT is found to have better performance than conventional DGJLT.

Keywords: Core-Shell, DIBL, Junctionless, MOSFET, Multigate, Oxide Material, Subthreshold-Slope, Transconductance, Threshold Voltage, VLSI.