Nano-FET Devices: Miniaturization, Simulation, and Applications (Part 1)

The chapter "Nanoelectronic Horizons" presents a forward-looking exploration of the symbiotic relationship between Field-Effect Transistor (FET) technologies and nanostructures, offering a glimpse into the future of nanoelectronics. Acknowledging the foundational role of FETs in modern electronics, this chapter unfolds the transformative potential that emerges with the integration of nanostructures.

Beginning with a historical overview, the narrative traces the evolution of FET technologies, setting the stage for the contemporary landscape. The foundations of FieldEffect Transistors, including their diverse types and applications, are succinctly explained. The subsequent transition into the realm of nanostructures unveils their unique properties at the nanoscale and establishes them as enablers of advanced functionalities in electronics. The chapter delves into the synergies between FET technologies and nanostructures, emphasizing their role in pushing the boundaries of traditional electronic capabilities. Exploration of recent advancements reveals cutting-edge developments in nanostructure integration, showcasing real-world applications and breakthroughs in research. Challenges and potential solutions in merging these technologies are examined, paving the way for a deeper understanding of the intricate landscape. As the narrative unfolds, readers are guided through the potential impact on various industries, the environmental considerations, and the regulatory landscape. The chapter concludes by envisioning the future prospects of FET technologies linked to nanostructures, offering insights into market trends, technological growth areas, and the societal implications of this transformative journey. Lastly, this chapter serves as a compass guiding readers through the evolving landscape of FET technologies with nanostructures, beckoning towards a future where innovation and collaboration redefine the horizons of nanoelectronics.

Moore's law has contributed to a significant factor behind the ongoing shrinking of transistors in CMOS technology since its inception in the 1960s. Dennard et al.'s scaling theory from 1974 illustrates how cost, performance, and power can be enhanced in solid-state devices while maintaining fundamental MOSFET operating characteristics. In the past, the regulation of dynamic power was governed by Moore's law. However, as leakage increases with decreasing geometries, quiescent power consumption becomes the predominant factor in microprocessor design. Short channel issues like DIBL, SS, and hot electron effect may all have a detrimental influence on MOS device performance. Because of these effects, CMOS technology has hurdles, and TFETs may overcome SS limits, making them a promising option for low-power standby uses. Finally, we discuss the possibilities beyond CMOS technology, detailing the difficulties and prospects for technological advancement. This chapter gives a brief summary of current developments in device development with an emphasis on Tunnel FETs for upcoming circuits.

The present study investigates the use of metasurfaces in the fabrication of photonic crystals to harness their unique features for improved optical functions. Metasurfaces, comprised of subwavelength nanostructures, offer unprecedented control of polarization, amplitude, and phase. When combined with the inherent characteristics of photonic crystals, such as bandgap formation and light confinement, novel opportunities arise for manipulating and guiding light at the nanoscale. The present work investigates the design principles, fabrication techniques, and potential applications of metasurface-enhanced photonic crystals. This chapter highlights the hybrid integration of metasurface techniques with photonic crystals and covers essential design issues. It highlights nonlinear optical phenomena, increased light-matter interactions, and tuneable bandgaps in metasurface-enhanced photonic crystals. This paper investigates the reflection and transmission characteristics of metasurface-enhanced photonic crystals, shedding light on their unique optical properties and potential applications. Furthermore, the research investigates many applications, such as sensors, light emission devices, and information processing, highlighting the transformational potential of this combined method. Through theoretical modeling and experimental validation, we present a comprehensive analysis of how metasurface enhancements influence the reflection and transmission spectra, including the emergence of tuneable bandgaps and tailored optical responses. This chapter advances the understanding of metasurface-based photonic crystals by providing a roadmap for academics and engineers in the fast-expanding field of nanophotonics through a critical assessment of problems and future objectives. By providing insights into the intricate interplay between metasurfaces and photonic crystals, this work contributes to the advancement of nanophotonics and lays the foundation for the development of novel devices with enhanced optical functionalities.

This research aims to explore the complex challenges regarding reliability and scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried configurations. The study thoroughly examines factors affecting reliability, such as traps, noise susceptibility, lateral straggle, self-heating, and scalability effects. These factors collectively impact the performance and lifespan of advanced electronic devices. Through extensive simulations under different operational conditions, this investigation quantifies and compares the influence of these reliability issues in both configurations. Additionally, the study delves into how HJ-DGV-TFETs maintain their reliability as technology continues to scale down.

This research aims to explore the complex challenges regarding reliability and scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried configurations. The study thoroughly examines factors affecting reliability, such as traps, noise susceptibility, lateral straggle, self-heating, and scalability effects. These factors collectively impact the performance and lifespan of advanced electronic devices. Through extensive simulations under different operational conditions, this investigation quantifies and compares the influence of these reliability issues in both configurations. Additionally, the study delves into how HJ-DGV-TFETs maintain their reliability as technology continues to scale down.

Purpose- In this manuscript, we have simulated a TFET device of the name hetero-gate dielectric tunnel field effect transistors with a source pocket (PHGD-TFET) of 5nm length in a channel on the source side. Therefore, our proposed device can be used for low-power applications. Design/Methodology Approach- We have compared all the DC/RF and linearity analysis parameters with simple gate hetero dielectric tunnel field effect transistors (HGD-TFET) by taking all other parameters the same. The structure simulation was done through the ATLASTM TCAD tool. The tunneling of extra carriers from the source to the channel region is the fundamental physics of the event. Finding- The subthreshold swing of our proposed device is 15 mV/dec, which is nearly four times lower than basic HGD-TFET, so it can be used for low-power applications. The ON-state current is increased by inserting a pocket in the channel region on the source side but has very little effect on the OFF current; therefore, PHGD-TFET is a more sustainable and energy-efficient device. Originality/value. In this work, we have designed our own structure of TFET with new dimension values and parameters.

In this chapter, we introduce a novel Tunnel Field-Effect Transistor (TFET) structure explicitly engineered for low-power applications. The proposed TFET structure offers an improved ION/IOFF current ratio and reduced subthreshold swing values, making it highly suitable for energy-efficient electronic devices. The design achieves a stepped channel by incorporating drain underlapping and channel engineering techniques, effectively reducing ambipolarity current. The proposed structure outperforms conventional TFETs with a 71% smaller average subthreshold swing (SS), demonstrating enhanced efficiency. These improvements address the demand for energy-efficient devices in fields such as portable electronics and the Internet of Things (IoT), demonstrating the innovative TFET structure's potential for low-power applications.

This article describes in detail Tunnel Field-Effect Transistors (TFETs) that are based on Transition Metal Dichalcogenides (TMDs). TFETs have garnered significant attention due to their potential for low-power electronics. Leveraging the unique properties of TMDs, including tunable bandgaps and high carrier mobilities, holds promise for enhancing TFET performance. The study explores the impact of TMDs on TFET characteristics, focusing on parameters such as bandgap engineering and current enhancement. Performance metrics of the device, such as subthreshold slope (SS), threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), and Ion/Ioff ratios, are evaluated through comparative analyses of diverse channel materials, including MoS2, MoSe2, MoTe2, WS2, and WSe2. The research findings obtained from this analysis illuminate the possibility of TMD-based TFETs in the progression of low-power electronics and provide significant recommendations for further optimizing devices and investigating applications.

This chapter provides a comprehensive analysis of recent advancements and applications of High Electron Mobility Transistors (HEMTs), with a specific focus on AlGaN/GaN-based technologies. Various aspects of HEMT performance and optimization strategies are explored through a series of studies, ranging from DC characteristics and low-frequency noise to statistical modeling of manufacturing variability and temperature-dependent large-signal modeling. Additionally, comparisons between different HEMT configurations and materials are presented, highlighting their respective strengths and applications across different temperature regimes, including cryogenic temperatures and millimeter-wave frequencies. The synthesis of these findings underscores the continuous evolution and promising future of HEMTs in powering diverse electronic applications with enhanced performance, stability, and efficiency.