Non uniform channel doping profile enables us to control threshold voltage
suppressing short channel effects. We showed how threshold voltage Vth is controlled
for various channel doping profiles such as epi-channel, and counter doped channel. Vth is controlled by the thickness of epi-layer in epi-channel MOSFETs and it is controlled
widely with centroid and dose in counter doped channel MOSFETs. The models were
verified by comparing with numerical data. The feasibility of counter doped channel is
also studied.
Keywords: Arbitrary doped channel, Channel doping, Counter doped channel,
Epi-channel MOSFET, Gauss’s law, Joined half Gaussian, Multiple ion
implantation, Poisson equation, Retrograde channel, Short channel immunity,
Subthreshold characteristics, Threshold voltage.
