The electric performances of devices such as MOS or SiGe HBT, specified
for analog and analog-digital circuits and working in the radiofrequency range, can be
penalized by the presence of defects inherent to the complex structure shrinking. This
work is focused on the identification of defects responsible for the current fluctuations
at the origin of low frequency noise (LFN) or Random Telegraphic Signals in industrial
submicronic BiCMOS technologies. For instance, Gummel characteristics are simulated
in order to identify generation-recombination or trap assisted tunnelling process in the
base current.
From theoretical point of view, numerical method for analysing heterostructure
semiconductor devices is described. Simulations and modeling both have to be
performed and followed by electrical parameter extraction. Often, this noise can be very
inconvenient since, from non-linearities, it is cumbersome for circuits, systems, working
with such devices in the radiofrequency range. It is worth noticing that LFN
characterization is not only a useful tool to analyze complex devices, but it seems
indispensable at circuit and system level.
Keywords: Devices, microwave, defects, deep traps, modeling, transport
equations, heteojunction bipolar transistor, electrical characteristics, first and
second order, parameter extraction, compact models, noise spectra, RTS noise,
carrier density and field fluctuations.
