Abstract
In this section, we consider reaction between impurity, point defects, and charges in diffusion phenomenon and diffusion equations for both of impurity and point defects. There are many levels of sophistication of treatment of the interaction of impurity and point defects. We perform approximations step by step, and derive diffusion models in various supplication levels.
Keywords: Ion implantation, diffusion, transient enhanced diffusion, pairing, point defects, diffusion flux, diffusivity, thermal equilibrium, electric field, mobility, Boltzmann constant, Einstein relationship, electron, hole, interstitial Si, vacancy, balance equation, five stream model, three stream model.
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