Ion Implantation and Activation

Volume: 2

Dose Loss

Author(s): Kunihiro Suzuki

Pp: 69-77 (9)

DOI: 10.2174/9781608057900113020007

* (Excluding Mailing and Handling)


Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.

Keywords: Sputtering, dose loss, backscattering, dose, sublimation energy, reduced energy, nuclear stopping power, electron stopping power, Gaussian profile, surface, B, P, As, Si.

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