It is important to predict ion implanted profiles in substrates comprised of
different materials, where related moment parameters are different. We describe two
procedures to generate profiles in multi-layers by using data for each layer, that is, dose
matching method, and Rp normalized method, where Rp is the projected range. We
show the process in which the methods are applied to multi-layers. Dose matching
method is a simple and effective method. However, it provides unstable results
sometimes, while Rp normalized method provides stable results.
Keywords: Ion implantation, multi-layer, dose, dose matching method, Rp
normalized method, projected range, straggling, profile, effective thickness,
Monte Carlo, P, W, Si, SiO2, channeling.
