Strain measurement based on reflection of polarized light from the strained semiconductor
sample is explained in this chapter. Spectroscopic ellipsometry is usually applied for thickness
measurement of thin films of materials with known optical functions. In this approach, the optical
functions are found with the layer thickness determined from additional separate measurements. From
the fitted optical function spectra, the shift in energy of the critical point can be determined
mathematically and using the deformation potential, the strain can be obtained.
Keywords: Spectroscopic ellipsometry, Piezo-optical effect, Parametric semiconductor model,
Deformation potential, Virtual substrate.
