This chapter provides a comprehensive analysis of recent advancements and
applications of High Electron Mobility Transistors (HEMTs), with a specific focus on
AlGaN/GaN-based technologies. Various aspects of HEMT performance and
optimization strategies are explored through a series of studies, ranging from DC
characteristics and low-frequency noise to statistical modeling of manufacturing
variability and temperature-dependent large-signal modeling. Additionally, comparisons
between different HEMT configurations and materials are presented, highlighting their
respective strengths and applications across different temperature regimes, including
cryogenic temperatures and millimeter-wave frequencies. The synthesis of these findings
underscores the continuous evolution and promising future of HEMTs in powering
diverse electronic applications with enhanced performance, stability, and efficiency.
Keywords: High Electron Mobility Transistors (HEMTs), AlGaN/GaN-based technologies, DC characteristics, low-frequency noise, statistical modeling, manufacturing variability, temperature-dependent modeling, performance optimization, cryogenic temperatures, millimeter-wave frequencies.
