This article describes in detail Tunnel Field-Effect Transistors (TFETs) that
are based on Transition Metal Dichalcogenides (TMDs). TFETs have garnered
significant attention due to their potential for low-power electronics. Leveraging the
unique properties of TMDs, including tunable bandgaps and high carrier mobilities, holds
promise for enhancing TFET performance. The study explores the impact of TMDs on
TFET characteristics, focusing on parameters such as bandgap engineering and current
enhancement. Performance metrics of the device, such as subthreshold slope (SS),
threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), and Ion/Ioff ratios,
are evaluated through comparative analyses of diverse channel materials, including
MoS2, MoSe2, MoTe2, WS2, and WSe2. The research findings obtained from this
analysis illuminate the possibility of TMD-based TFETs in the progression of low-power
electronics and provide significant recommendations for further optimizing devices and
investigating applications.
Keywords: 2D material, Transition Metal Dichalcogenides (TMD), Thickness Engineered, Tunnel Field Effect Transistor (TFET).
