In this chapter, we introduce a novel Tunnel Field-Effect Transistor (TFET)
structure explicitly engineered for low-power applications. The proposed TFET structure
offers an improved ION/IOFF current ratio and reduced subthreshold swing values,
making it highly suitable for energy-efficient electronic devices. The design achieves a
stepped channel by incorporating drain underlapping and channel engineering
techniques, effectively reducing ambipolarity current. The proposed structure
outperforms conventional TFETs with a 71% smaller average subthreshold swing (SS),
demonstrating enhanced efficiency. These improvements address the demand for energy-efficient devices in fields such as portable electronics and the Internet of Things (IoT),
demonstrating the innovative TFET structure's potential for low-power applications.
Keywords: CTFET, DPSC-TFET, Non-local BTBT model, Screening length.
