Purpose- In this manuscript, we have simulated a TFET device of the name
hetero-gate dielectric tunnel field effect transistors with a source pocket (PHGD-TFET)
of 5nm length in a channel on the source side. Therefore, our proposed device can be
used for low-power applications. Design/Methodology Approach- We have compared all
the DC/RF and linearity analysis parameters with simple gate hetero dielectric tunnel
field effect transistors (HGD-TFET) by taking all other parameters the same. The
structure simulation was done through the ATLASTM TCAD tool. The tunneling of extra
carriers from the source to the channel region is the fundamental physics of the event.
Finding- The subthreshold swing of our proposed device is 15 mV/dec, which is nearly
four times lower than basic HGD-TFET, so it can be used for low-power applications.
The ON-state current is increased by inserting a pocket in the channel region on the
source side but has very little effect on the OFF current; therefore, PHGD-TFET is a more
sustainable and energy-efficient device. Originality/value. In this work, we have designed
our own structure of TFET with new dimension values and parameters.
Keywords: Tunnel field effect transistor (TFET), Hetero gate dielectric, Band-toBand-tunneling (BTBT).
