This research aims to explore the complex challenges regarding reliability and
scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried
configurations. The study thoroughly examines factors affecting reliability, such as traps,
noise susceptibility, lateral straggle, self-heating, and scalability effects. These factors
collectively impact the performance and lifespan of advanced electronic devices.
Through extensive simulations under different operational conditions, this investigation
quantifies and compares the influence of these reliability issues in both configurations.
Additionally, the study delves into how HJ-DGV-TFETs maintain their reliability as
technology continues to scale down.
Keywords: Hetero buried oxide, HJ-DGV-TFET, Noise, Oxide thickness, Stacked buried oxide, Source doping, Traps, Temperature variations.
