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Author(s): Halyna Khlyap
Pp: 96-108 (13)
DOI: 10.2174/978160805021510901010096
* (Excluding Mailing and Handling)
Preparation and main electrophysical characteristics of A1B5C6 nanostructural semiconductor materials are discussed. Sensor devices designed for external electric field detection and operation in aggressive environments are described. Numerical simulation of the main electrical characteristics of these structures is also reported.
Cite this chapter as:
Design of Active Elements Based on Nanostructural A1B5C6 Materials, Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices (2009) 1: 96. https://doi.org/10.2174/978160805021510901010096
DOIhttps://doi.org/10.2174/978160805021510901010096
Publisher NameBentham Science Publisher
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