Charge transport mechanisms and photosensitivity of amorhous silicon thin films prepared by magnetron sputtering
are investigated at room temperature. The power law and the power-exponential laws governing the currents observed
experimentally are revealed. The near-IR photosensitivity of the films can be sufficiently improved by means of high-temperature
hydrogenation. Important properties of heterostructures based on PbS, ZnSe, ZnTe and CdTe semiconductors are also discussed
along with the results of numerical analysis of experimental data.
