Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Heterostructure Growth

Author(s): Halyna Khlyap

Pp: 21-32 (12)

DOI: 10.2174/978160805021510901010021

* (Excluding Mailing and Handling)


Principal technologies used for heterostructures growth are described: molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), atomic layer deposition (ALD). The main tools for characterization of the structures obtained are presented along with recent experimental data on the most important structural and electrical properties of the heterostructures based on III-V and II-VI semiconductor materials.

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