Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Semiconductor Structures: Basic Models and Experimental Results

Author(s): Halyna Khlyap

Pp: 1-20 (20)

DOI: 10.2174/978160805021510901010001

* (Excluding Mailing and Handling)

Abstract

Principal theoretical models of nonideal semiconductor heterostructures as well as their applications for describing experimental data are presented. Main electrophysical characteristics (current-voltage and capacitance-voltage) of real heterojunctions based on A2B6-A4B6 materials and nanoheterostructures Si/CNT are interpreted in the framework of these models.

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