The presence of intrinsic polarizations into the ferroelectric materials helps
them to get polarized easily on the application of the electric field. The presence of the
retentivity and the coercivity formed a hysteresis loop pattern when the field is applied
to the materials. But some artifacts make the nature of such a hysteresis loop distorted
for the ferroelectric materials. In general, the non-centrosymmetric nature of the crystal
structure responsible for the ferroelectric nature of the materials. That is why the
presence of the intrinsic polarization in the electrets does not make it a ferroelectric
class of materials. Actually, the ferroelectrics come under the dielectric class of
materials. The present-day application of the ferroelectric materials ranges from the
ferroelectric memory devices, electro caloric devices, magneto electric devices, DRAM
capacitors, etc. The flexible properties along with the high writing speed and
cyclability make Bi3.25La0.75Ti3O12 as one of the most promising materials for FERAM
applications. The large ECE values of the Barium hafnium titanate makes it very useful
for the electro caloric cooling of the microelectronics devices. The presence of both
spin glass state as well as the ferroelectricity make advanced ceramics like La3Ni2NbO9
couple both magnetic and electric field within the same material for the fabrication of
the magneto-electric devices. The presence of a morphotropic phase boundary in the
advanced ceramics of hafnium oxide and zirconium oxide can result in a high dielectric
constant for the DRAM applications.
Keywords: Ceramics, DRAM, Ferroelectric Materials, Magneto-Electric
Devices, Magnetic loss.